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| Ordering number : ENA0369 SCH2815 SANYO Semiconductors DATA SHEET SCH2815 Features * * MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications * Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * 1.5V drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 150 2 --55 to +125 --55 to +125 V V mA A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 30 10 0.7 2.8 0.6 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : QQ (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91306PE MS IM TC-00000165 No. A0369-1/6 SCH2815 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=100mA IF=150mA VR=6V VR=10V, f=1MHz IF=IR=10mA, See specified Test Circuit. 15 0.32 0.35 9 10 0.35 0.40 45 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=350mA ID=350mA, VGS=4V ID=200mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=0.7A VDS=10V, VGS=4V, ID=0.7A VDS=10V, VGS=4V, ID=0.7A IS=0.7A, VGS=0V 30 1 1 0.4 0.45 0.8 0.7 0.8 1.6 30 7 3.5 8 6 10 8 1 0.4 0.2 0.93 1.2 0.9 1.15 2.4 1.3 V A A V S pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7028-003 Electrical Connection 6 1.6 0.05 5 4 0.2 654 0.2 1.6 1.5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 0.05 1 23 0.5 0.56 1 2 3 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 0.25 No. A0369-2/6 SCH2815 Switching Time Test Circuit [MOSFET] trr Test Circuit [SBD] VIN 4V 0V VIN VDD=15V Duty10% 10mA ID=350mA RL=42 PW=10s D.C.1% 10s G --5V trr SCH2815 P.G 50 S 0.4 ID -- VDS V 3.0 V 2.5 2.0 V 0.8 ID -- VGS C VDS=10V 10mA D VOUT 50 100 10 Ta= --25 4. 6.0V 0V 3.5V Drain Current, ID -- A Drain Current, ID -- A 0.2 VGS=1.5V 0.4 0.1 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07511 Drain-to-Source Voltage, VDS -- V 5.0 IT07510 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 25 C Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- 4.0 Static Drain-to-Source On-State Resistance, RDS(on) -- 3.0 350mA 2.0 =2.5V A, VGS 200m I D= =4.0V A, V GS =350m ID ID=200mA 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 --40 --20 0 Ta= 7 RDS(on) -- Ta 5C --25 C 20 40 60 25 C 80 100 0.3 0.6 75 C 1mA 120 140 Gate-to-Source Voltage, VGS -- V IT10876 Ambient Temperature, Ta -- C IT10877 No. A0369-3/6 SCH2815 3 yfs -- ID VDS=10V 3 2 1.0 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 2 1.0 7 5 3 2 Source Current, IS -- A 7 5 3 5C 0.1 7 5 3 2 25 0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 3 1.0 IT07514 7 0.01 0.2 0.4 25C C 0.6 Ta= 7 0.8 --25 1.0 Ta= C 75 C C --25 2 1.2 1.4 IT07515 SW Time -- ID VDD=15V VGS=4V Ciss, Coss, Crss -- pF 100 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 Ciss td(off) 10 7 5 td(on) tf tr 10 7 5 3 2 Coss Crss 3 2 0.1 1.0 2 3 5 7 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 IT07516 3 0 5 10 15 20 25 30 IT08960 Drain-to-Source Voltage, VDS -- V VGS -- Qg RDS(on) -- ID Static Drain-to-Source On-State Resistance, RDS(on) -- Gate-to-Source Voltage, VGS -- V VDS=10V ID=0.7A VGS=4V 2 1.0 7 Ta=75C 25C --25C 5 0.9 1.0 3 0.01 2 3 5 7 0.1 2 3 5 Total Gate Charge, Qg -- nC 3 IT10878 7 5 RDS(on) -- ID VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Drain Current, ID -- A 7 1.0 IT07519 RDS(on) -- ID VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- 2 3 1.0 Ta=75C 2 Ta=75C --25C 7 25C --25C 1.0 25C 5 7 5 0.01 3 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 1.0 IT07520 7 2 3 5 7 0.1 2 3 Drain Current, ID -- A IT07521 No. A0369-4/6 SCH2815 5 3 2 ASO IDP=2.8A [MOSFET] 10 ID=0.7A Drain Current, ID -- A 1.0 7 5 3 2 0.1 7 5 3 2 10 ms 0 s 1m Allowable Power Dissipation, PD -- W 10s 0.8 PD -- Ta [MOSFET] 0.6 s M ou nte DC 10 op er ati 0m do s na ce 0.4 ram Operation in this area is limited by RDS(on). on ic (T a= bo ard 25 C (9 00 ) 0.2 mm 2 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 5 !0 .8 mm )1 un 0 0 20 40 60 80 100 120 140 it 160 Drain-to-Source Voltage, VDS -- V 7 5 3 2 IT10879 10000 7 5 3 2 Ambient Temperature, Ta -- C IT10880 IF -- VF IR -- VR Ta=125C Forward Current, IF -- mA Reverse Current, IR -- A 100 7 5 12 5C 3 2 10 7 5 3 2 1.0 7 5 3 2 0 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0 2 4 6 100C 75C Ta = 50C 25C 100 75 C 50 C C 25 C 0.1 0.2 0.3 0.4 0.5 0.6 IT06808 5 8 10 12 14 16 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.5 PF(AV) -- IO (1) Reverse Voltage, VR -- V IT06809 C -- VR Rectangular wave 360 f=1MHz (2) (4) (3) 0.4 Interterminal Capacitance, C -- pF 0.7 3 Sine wave 0.3 180 360 2 0.2 0.1 0 0 0.1 0.2 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 0.3 0.4 0.5 0.6 10 7 5 1.0 2 3 5 7 10 2 3 Average Output Current, IO -- A 2.8 IT06810 Reverse Voltage, VR -- V IT06811 IFSM -- t Current waveform 50Hz sine wave IS Surge Forward Current, IFSM(Peak) -- A 2.4 2.0 20ms t 1.6 1.2 0.8 0.4 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00268 No. A0369-5/6 SCH2815 Note on usage : Since the SCH2815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No. A0369-6/6 |
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